High-Temperature Atomic Layer Deposition of Rutile TiO2 Films on RuO2 Substrates: Interfacial Reactions and Dielectric Performance

Jeon, JihoonKim, TaikyuJang, MyoungsuChung, Hong KeunKim, Sung-ChulWon, Sung OkPark, YongjooChoi, Byung JoonChung, Yoon JangKim, Seong Keun
Issue Date
American Chemical Society
Chemistry of Materials, v.36, no.7, pp.3326 - 3333
Capacitor structures utilized in modern dynamic random access memory (DRAM) cells require the conformal growth of high-k films on electrode materials. In this context, the atomic layer deposition (ALD) of rutile-phase TiO2 on nearly lattice-matched substrates such as RuO2 has been extensively explored. It is typically desired to grow such insulating films at high temperatures to ensure low defect concentrations and high crystallinity. However, with increasing growth temperature, it is also crucial to consider the aggravated effect of interface reactions that could potentially hinder final device performance. Here, we report the high-temperature ALD growth of TiO2 on RuO2 substrates using the heteroleptic precursor trimethoxy(pentamethylcyclopentadienyl)titanium ((CpMe5)Ti(OMe)(3)) and O-3. High-quality, rutile-phase TiO2 films with large dielectric constants of similar to 100 could be grown at temperatures exceeding 300 degrees C. When the growth temperature reaches 330 degrees C, we find that an anomalous RuO2 reduction reaction occurs due to interactions between the substrate and Ti precursor. The reduced Ru is transformed into volatile RuO4 during the subsequent O-3 injection steps, resulting in partial etching of the substrate. Simple RuO2/TiO2/RuO2 capacitor devices fabricated from optimized films demonstrate excellent dielectric performance with an equivalent oxide thickness (EOT) of 0.5 nm at leakage current densities of less than 10(-7) A/cm(2). A further reduction of EOT to 0.4 nm could be achieved by implementing a single cycle of Al doping to the TiO2 films, surpassing the benchmark values proposed for next-generation DRAM capacitors by a safe margin. Our findings clearly showcase the benefits of high-temperature ALD in the semiconductor technology, as well as providing guidelines for the interpretation of the convoluted interface reactions tied to its implementation.
Appears in Collections:
KIST Article > 2024
Files in This Item:
There are no files associated with this item.
RIS (EndNote)
XLS (Excel)


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.