Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene

Authors
Lee, HyobeomIm, HayoonChoi, Byoung KiPark, KyoungreeChen, YiRuan, WeiZhong, YongLee, Ji-EunRyu, HyejinCrommie, Michael F.Shen, Zhi-XunHwang, ChoongyuMo, Sung-KwanHwang, Jinwoong
Issue Date
2024-04
Publisher
Springer | Korea Nano Technology Research Society
Citation
Nano Convergence, v.11, no.1
Abstract
Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a controlled epitaxial growth of monolayer TaSe2 with different structural phases, 1H and 1 T, on a bilayer graphene (BLG) substrate using molecular beam epitaxy, and its impact on the electronic properties of the heterostructures using angle-resolved photoemission spectroscopy. 1H-TaSe2 exhibits significant charge transfer and band hybridization at the interface, whereas 1 T-TaSe2 shows weak interactions with the substrate. The distinct interfacial interactions are attributed to the dual effects from the differences of the work functions as well as the relative interlayer distance between TaSe2 films and BLG substrate. The method demonstrated here provides a viable route towards interface engineering in a variety of transition-metal dichalcogenides that can be applied to future nano-devices with designed electronic properties.
Keywords
SCHOTTKY-BARRIER; LAYER; PHASE; Transition metal dichalcogenides; TaSe2; Graphene; Interface; Heterostructure; Molecular beam epitaxy; Angle-resolved photoemission spectroscopy; Scanning tunneling microscopy
ISSN
2196-5404
URI
https://pubs.kist.re.kr/handle/201004/149776
DOI
10.1186/s40580-024-00422-9
Appears in Collections:
KIST Article > 2024
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