Perovskite Field-Effect Transistor Memory Employing a Large Grain Sized α-Phase Formamidinium Lead Triiodide

Abstract

Halide perovskite materials have emerged as highly promising candidates for a wide range of electrical and optical devices due to their high charge carrier mobility, tunable band gaps, and facile manufacturability. However, their potential use as active channels in field-effect transistor (FET) memory devices remains underexplored, primarily due to challenges related to operational instability and the control of interfaces and crystallinity. Here, we present a significant advancement in perovskite field-effect transistor (PeFET) memory devices, utilizing large grain-sized alpha-phase formamidinium lead triiodide (FAPbI(3)). The alpha-phase FAPbI(3) was synthesized using a black powder method with MACl and MDACl(2) additives, resulting in enhanced crystallinity and a well-defined energy bandgap. Additionally, it demonstrated excellent stability to external environmental conditions, such as high humidity (>= 40 RH %) and thermal conditions (<= 150 degrees C). Using this method, the fabricated PeFET memory devices demonstrated anticlockwise p-type switching behavior with an I-ON/I-OFF ratio of 1.34 +/- 0.54 x 10(3) and durability over 100 continuous sweeping cycles under ambient conditions. We propose a switching mechanism that relies on the combined effects of mixed ionic-electronic conduction and charge trapping and detrapping at the interface between FAPbI(3) and SiO2.