Interfacial characteristics dependence on interruption times in InGaAs/ InAlAs superlattice grown by molecular beam epitaxy

Abstract

This study delves into the impact of interruption times on the interfacial characteristics of strain-balanced InGaAs/InAlAs superlattice structures. The structures were grown epitaxially using molecular beam epitaxy technique and subsequently analyzed through atomic probe tomography. Based on our findings, interruption times significantly influence the characteristics of layers and interfaces, as well as the composition of layers. Notably, interruption times significantly influence the interface length in the InAlAs layers, with changes of up to 10 % of its thickness. In contrast, the interface length in the InGaAs layers remains unaffected by variations in interruption time. These insights into the evolution of interface lengths, which are influenced by the growth modes of layers, adatom mobility, and interruption times, present a promising opportunity for enhancing epitaxial growth methods for quantum devices.