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dc.contributor.authorKuk, Song-Hyeon-
dc.contributor.authorKo, Kyul-
dc.contributor.authorKim, Bong Ho-
dc.contributor.authorLim, Hyeong-Rak-
dc.contributor.authorKim, Joon Pyo-
dc.contributor.authorHan, Jae-Hoon-
dc.contributor.authorKim, Sang-Hyeon-
dc.date.accessioned2024-11-06T09:30:43Z-
dc.date.available2024-11-06T09:30:43Z-
dc.date.created2024-11-06-
dc.date.issued2024-11-
dc.identifier.issn0018-9383-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/150961-
dc.description.abstractThe integration of higher dielectric constant (higher-k) gate oxides, such as doped-HfO2, in field-effect-transistors (FETs) has gained attention for further reducing the equivalent oxide thickness (EOT) in the advanced CMOS technology. However, the gate oxide in the MOSFET should be carefully selected considering the enhancement of the inversion carrier surface density ( N-s,N-inv ) and channel mobility ( mu(ch) ), which has been a less concern in doped-HfO2 . We study mu(ch) and N-s,N-inv in higher-k n-/p-channel FET (n/pFET) through gated-Hall measurement. Importantly, mu(ch) is not degraded by higher-k doped-HfO2 , unlike conventional integrations of high-k gate oxides. This finding shows that using higher-k doped-HfO(2 )for the gate oxide promises a potential for achieving higher drain current without mobility degradation and without reducing the gate oxide thickness, compared to paraelectric HfO2 .-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleChannel Mobility With Higher-k Doped-HfO₂ for CMOS Logic-
dc.typeArticle-
dc.identifier.doi10.1109/TED.2024.3466843-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE Transactions on Electron Devices, v.71, no.11, pp.6534 - 6538-
dc.citation.titleIEEE Transactions on Electron Devices-
dc.citation.volume71-
dc.citation.number11-
dc.citation.startPage6534-
dc.citation.endPage6538-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.scopusid2-s2.0-85207634320-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Early Access-
dc.subject.keywordPlusINVERSION LAYER MOBILITY-
dc.subject.keywordPlusGATE MOSFETS-
dc.subject.keywordPlusSI MOSFETS-
dc.subject.keywordPlusUNIVERSALITY-
dc.subject.keywordPlusDEGRADATION-
dc.subject.keywordAuthorHafnium oxide-
dc.subject.keywordAuthorLogic gates-
dc.subject.keywordAuthorLogic-
dc.subject.keywordAuthorPhonons-
dc.subject.keywordAuthorHigh-k dielectric materials-
dc.subject.keywordAuthorFilms-
dc.subject.keywordAuthorDegradation-
dc.subject.keywordAuthorSilicon-
dc.subject.keywordAuthorFeFETs-
dc.subject.keywordAuthorAdvanced CMOS-
dc.subject.keywordAuthorcarrier mobility-
dc.subject.keywordAuthorfield-effect transistor (FET)-
dc.subject.keywordAuthorhigh-k materials-
dc.subject.keywordAuthorscattering-
dc.subject.keywordAuthorscattering-
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