Channel Mobility With Higher-k Doped-HfO₂ for CMOS Logic

Authors
Kuk, Song-HyeonKo, KyulKim, Bong HoLim, Hyeong-RakKim, Joon PyoHan, Jae-HoonKim, Sang-Hyeon
Issue Date
2024-11
Publisher
Institute of Electrical and Electronics Engineers
Citation
IEEE Transactions on Electron Devices, v.71, no.11, pp.6534 - 6538
Abstract
The integration of higher dielectric constant (higher-k) gate oxides, such as doped-HfO2, in field-effect-transistors (FETs) has gained attention for further reducing the equivalent oxide thickness (EOT) in the advanced CMOS technology. However, the gate oxide in the MOSFET should be carefully selected considering the enhancement of the inversion carrier surface density ( N-s,N-inv ) and channel mobility ( mu(ch) ), which has been a less concern in doped-HfO2 . We study mu(ch) and N-s,N-inv in higher-k n-/p-channel FET (n/pFET) through gated-Hall measurement. Importantly, mu(ch) is not degraded by higher-k doped-HfO2 , unlike conventional integrations of high-k gate oxides. This finding shows that using higher-k doped-HfO(2 )for the gate oxide promises a potential for achieving higher drain current without mobility degradation and without reducing the gate oxide thickness, compared to paraelectric HfO2 .
Keywords
INVERSION LAYER MOBILITY; GATE MOSFETS; SI MOSFETS; UNIVERSALITY; DEGRADATION; Hafnium oxide; Logic gates; Logic; Phonons; High-k dielectric materials; Films; Degradation; Silicon; FeFETs; Advanced CMOS; carrier mobility; field-effect transistor (FET); high-k materials; scattering; scattering
ISSN
0018-9383
URI
https://pubs.kist.re.kr/handle/201004/150961
DOI
10.1109/TED.2024.3466843
Appears in Collections:
KIST Article > 2024
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