A co-solvent exfoliation strategy of quasi-1D electronic grade Ta2Pt3Se8 for enhanced yields in non-toxic low boiling point solvents

Abstract

Ta2Pt3Se8, a quasi-1D van der Waals material, exhibits promising structural and electrical properties, making it a potential candidate for electronic applications. However, the traditional liquid phase exfoliation (LPE) of Ta2Pt3Se8 requires toxic and high boiling point solvents like NMP and DMF, which limits its broader application. In this study, we introduce a co-solvent strategy using an IPA/water mixture to optimize the LPE of Ta2Pt3Se8. By adjusting the volume ratios, the total surface tension, polar-to-dispersive (P/D) ratio and dielectric constant of the co-solvent were fine-tuned, achieving high exfoliation efficiency. Field-effect transistors (FETs) were successfully fabricated and exhibited a field-effect mobility of 6.76 cm2 V？1 s？1 and Ion/Ioff greater than 103. The results demonstrate that this co-solvent approach provides a lower-toxicity alternative for LPE while maintaining high exfoliation yields.