Synthesis of functional chalcogenide materials for memory/sensing devices and their integration into artificial sensory systems

Authors
Liu, PengfeiHeo, Jae WonBong, HyeonminChoe, JinsikLee, HuiyoungLee, Won-KyuKim, Myung-GilSon, DongheeKang, JoohoonEom, TaeyongPark, SungjinKim, In Soo
Issue Date
2026-04
Publisher
IOP Publishing
Citation
International Journal of Extreme Manufacturing, v.8, no.2
Abstract
With distinctive phase-change and switching properties, chalcogenide materials have emerged as critical components in various cutting-edge technologies. This review attempts to provide an overview of chalcogenide materials, from their fundamental properties to their diverse applications with focus on memory and sensing technologies, which are indispensable components in human-like electronic artificial sensory systems. After reviewing the synthesis and application of chalcogenide materials with respect to dimensionality, we focus on the key advances in (1) memory devices, including phase-change memory (PCM), ovonic threshold switching (OTS) selectors, and selector-only memory (SOM), and (2) sensing devices, including optical sensors, gas sensors, and neuromorphic sensors. Emphasis will be given on how chalcogenide materials can be integrated into next-generation systems, such as wearable platforms, artificial intelligence, and neuromorphic/quantum computing systems, to meet the growing demands for high-performance memory and multi-functional sensing. We also provide an overview of emerging research trends as well as a comprehensive perspective on the current status of research on chalcogenides. Finally, we attempt to provide insights into how chalcogenides can continue to drive technological breakthroughs in both memory and sensing applications while shaping the future landscape of intelligent systems, smart sensing platforms, and sustainable technology development.
Keywords
ATOMIC LAYER DEPOSITION; CHEMICAL-VAPOR-DEPOSITION; OVONIC THRESHOLD SWITCH; THIN-FILM; METAL CHALCOGENIDES; GE2SB2TE5 FILMS; GLASS; MOS2; CHEMISTRY; NONLINEAR-OPTICAL PROPERTIES; materials synthesis; device integration; artificial sensory system; phase-change memory; sensing modalities; functional chalcogenides
ISSN
2631-7990
URI
https://pubs.kist.re.kr/handle/201004/153798
DOI
10.1088/2631-7990/ae1db9
Appears in Collections:
KIST Article > 2026
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