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Issue DateTitleAuthor(s)
-Effect of AlSb buffer layer and InAs channel thickness on electrical properties of InAs/AlSb-based 2 DEG HEMT structureShin Sang Hoon; Lim Ju-Young; SONG, JIN-DONG; Han, Suk Hee; TG Kim
-High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n- doping on InSb/GaAsSONG, JIN-DONG; Kim Hyung-jun; Shin Sang Hoon; Su youn, Kim
-Large droplet GaAs QDs for the application to single photon source and application of InAs QDs for high-quality growth of InSb on GaAs; magnetic logic devicesSONG, JIN-DONG
-The effect of various sacrifice-layers on the electrical properties of thick InSb layers grown on GaAs wafersShin Sang Hoon; Lim Ju-Young; Su youn, Kim; SONG, JIN-DONG; TG Kim
-Ultrasound-Based Motion Cancelation of an Inner Target of the BodyLee, Deukhee; Norihiro Koizumi; Kohei Ota; Kiyoshi Yoshinaka; Yoichiro Matsumoto; Mamoru Mitsuishi
-Possibility of output in a supercritical region at ambient pressure during the synthesis of silica aerogelO. A. Mykaylo; G. D. Nipan; Oh, Young-Jei
-Double Ni-Mn hydroxides as electrode materials of electrochemical capacitorsOleg A. Shlyakhtin; Oh, Young-Jei; A. M. Skudin
-Effect of Sn and In Addition on Microstructure and Strength of Au-Pt-Cu Dental BiomaterialLEE SANG HYEOK; JUNG HO NYEON; Do, Jung Man; B.S. Lim; Byeon Jai Won
-Preparation of silica aerogel by ambient pressure drying with binary azeotropes as pore fluidOh, Young-Jei; O. S. Mykaylo
-Coercivity Variation of Co rich Amorphous Ribbons According to Shape AnisotropyPark Chang Bean; Dohun Kim; Park Sun Hee; HAN, JUN HYUN; Jeung, Won Young

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