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| Issue Date | Title | Author(s) |
|---|
| 1997-07 | LED characterization of an alternating copolymer and its blends | Kim, D.Y.; Kim, J.K.; Cho, H.N.; Kim, C.Y. |
| 1997-07-01 | Fabrication of metal-ferroelectric-insulator-semiconductor field dffect transistor (MEFISFET) using Pt-SrBi2Ta2O9-Y2O3-Si structure | Kim, Yong Tae |
| 1997-07-01 | Thermal stabilites of PECVD W-B-N thin films as a diffusion barrier | Kim, Yong Tae |
| 1997-07-27 | Preparation and Characterization of Ultra-Fine CoFe2O4 Powders by a Sol-Gel Method | Oh, Young Jei |
| 1997-07-01 | C-V characteristics of Pt/SrBi2Ta2O9/CeO2/Si structure for non volatile memory devices | Kim, Yong Tae |
| 1997-07-01 | A proposal of Pt-SrBi2Ta2O9/CeO2/Si structure for non destructive read out memory devices | Kim, Yong Tae |
| 1997-07-01 | Characteristics of SrBi2O2O9/thin oxide /Si structure for non-destructive read out | Kim, Yong Tae |
| 1997-07-01 | Comparison in electrical properties SrBi2Ta2O9/CeO2/Si and SrBi2Ta2O9/Si structures | Kim, Yong Tae |
| 1997-07-01 | High performance of W-B-N Schottky contact to GaAs | Kim, Yong Tae |
| 1997-01-01 | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiNx capping layer for dielectric cap | Choi, Won Jun |
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