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Title
Author(s)
1997-06
Study on the growth characteristics of thick GaN on sapphire substrate using hydride vapor phase epitaxy
이정욱
;
유지범
;
변동진
;
금동화
1997-11
Effect of substrate surface roughness modified by nitridation on GaN growth
정재식
;
변동진
;
김병호
;
이재인
;
유지범
;
금동화
1997-09
Growth of a thick GaN film on ZnO/sapphire using hydride vapor phase epitaxy
이정욱
;
유지범
;
양형국
;
박종철
;
변동진
;
금동화
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-Author
3
금동화
3
유지범
2
이정욱
1
김병호
1
박종철
1
양형국
1
이재인
1
정재식
-Subject
3
GaN film
2
hydride vapor phase epitaxial growth
2
ZnO buffer layer
-Date issued
3
1997
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