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Growth of a thick GaN film on ZnO/sapphire using hydride vapor phase epitaxy

Other Titles

ZnO 완충층을 이용한 sapphire 기판위에 hydride vapor phase epitaxy에 의한 후막 GaN의 성장특성

Authors

이정욱; 유지범; 양형국; 박종철; 변동진; 금동화

Issue Date

1997-09

Citation

응용물리 = Ungyong Mulli (The Korean physical society)., v.10, no.5, pp.458 - 462

Keywords

GaN film; hydride vapor phase epitaxial growth; ZnO buffer layer

URI

https://pubs.kist.re.kr/handle/201004/143601

Appears in Collections:

KIST Article > Others

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