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Issue Date
Title
Author(s)
1997-06
Study on the growth characteristics of thick GaN on sapphire substrate using hydride vapor phase epitaxy
이정욱
;
유지범
;
변동진
;
금동화
1997-09
Growth of a thick GaN film on ZnO/sapphire using hydride vapor phase epitaxy
이정욱
;
유지범
;
양형국
;
박종철
;
변동진
;
금동화
1995-01
A new approach to biological process for nitrogen removal.
이영대
;
최용수
;
신응배
;
이정욱
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-Author
2
금동화
2
변동진
2
유지범
1
박종철
1
신응배
1
양형국
1
이영대
1
최용수
-Subject
2
GaN film
2
hydride vapor phase epitaxial growth
2
ZnO buffer layer
1
biological treatment
1
denitrification
1
nitrification
1
T-N removal
1
wastewater
-Date issued
2
1997
1
1995
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