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Issue DateTitleAuthor(s)
1996-08Cold energy storage using direct contact heat transfer.이윤표; 이춘식; 윤성영
1996-08Double-pumped phase conjugation in inverted Nd:YAG.김동환; Russel P. M. Green; Darren Udaiyan; Michael J. Damzen
1996-08Future trends for wind power technology in the republic of Korea최항철
1996-08Effects on compost stabilization by the design factors of the composting apparatus for the animal wastes.김태형; 박완철; 하준수; 신남철
1996-08A novel approach for state estimation.최익; 최주엽; 김권호; 박정민
1996-08FED 기술 강좌 : Amorphic diamond FEA 및 진공 실장 기술주병권; 오명환
1996-08Fe-Al-Nb-B-(Cu) 계 초미세 결정합금의 자기적 특성 .박진영; 서수정; 김규진; 김광윤; 노태환
1996-08극박형 Fe-Al-Nb-B-Cu 계 초미세결정합금의 자기적 특성 .박진영; 서수정; 김광윤; 노태환
1996-08Research trend on magnetic materials for micro-machine.김희중
1996-08Properties of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4Son, CS; Kim, SI; Kim, Y; Lee, MS; Kim, MS; Min, SK; Choi, IH
1996-08The genetic toxicity of synthetic chemicals .2. A pyrethroid insecticide, fenpropathrinRyu, JC; Kim, KR; Kim, HJ; Ryu, EK; Lee, SY; Jung, SO; Youn, JY; Kim, MH; Kwon, OS
1996-08The phase transition and microwave dielectric properties of tin modified zirconium titanate by melting processPark, Y; Kim, YH; Kim, HG
1996-08-01Application of homogenization FEM analysis to regular and re-entrant honeycomb structuresLee, JH; Choi, JB; Choi, K
1996-08-05Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substratesKim, SI; Kim, MS; Kim, Y; Son, CS; Hwang, SM; Min, BD; Kim, EK; Min, SK
1996-08-12Improvement of carrier capture efficiency of short-period GaAs/AlGaAs quantum wire array by a new lithography methodKim, TG; Kim, EK; Min, SK; Park, JH
1996-08-28Formation of paramagnetic defect centers in aluminophosphate molecular sievesHong, SB; Kim, SJ; Uh, YS
1996-08Preparation of antibodies with glycosidase activity using in vitro and in vivo immunizationsYu, JH; Choi, SY; Han, EY; Hwang, JS; Seo, SH; 이성수; Park, HK; Jeong, SJ; Youn, HJ
1996-09Thickness effects of SiOxNy interlayer inserted between BaTiO3 insulating layer and ZnS:Mn phosphor layer in thin film electroluminescent devicesSong, MH; Lee, YH; Hahn, TS; Oh, MH; Yoon, KH
1996-09Abnormal growth of faceted (WC) grains in a (Co) liquid matrixPark, YJ; Hwang, NM; Yoon, DY
1996-09Determining the absolute value of penetration depth of large area filmsLee, J.Y.; Kim, Y.H.; Hahn, T.-S.; Choi, S.S.

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