| 1998-07 | Characterization of the nitrided GaAs thin layers after rapid thermal annealing by using raman scattering | Koh, E.K.; Park, Y.J.; Kim, E.K.; Choh, S.H. |
| 1998-08 | Vibration control of 2-mass system using a neural network torsional torque estimator | Song, Joong-Ho; Lee, Kyo-Beum; Choi, Ick; Kim, Kwang-Bae; Choi, Joo-Yeop; Lee, Kwang-Won |
| 1998-07 | Light emitting devices using only edge emission reflected by cone-shaped micro-tip reflectors | Lee, Yun-Hi; Lee, Sang-Jo; Kim, Young-Sik; Ju, Byeong-Kwon; Oh, Myung-Hwan |
| 1998-07 | Influences of ambient gases upon emission characteristics of Mo-FEAs during frit sealing process | Kim, Hoon; Ju, Byeong Kwon; Lee, Kwang Bae; Kang, Moon Sik; Jang, Jin; Oh, Myung Hwan |
| 1998-08 | Novel measurement of linear dispersion slope near the zero dispersion wavelength by four wave mixing | Kim, Dong Hwan; Kim, Sang Hyuck; Jo, Jae Cheol; Kim, Sang Kuk; Choi, Sang Sam |
| 1998-08 | Femoral anteversion: Estimation by 3D modelling | Kim, J.S.; Choi, K.W.; Kim, S.I. |
| 1998-07 | Self-assembled quantum dot single electron devices | Jung, S.K.; Choi, B.H.; Kim, S.I.; Hyun, C.K.; Min, B.D.; Hwang, S.W.; Park, J.H.; Kim, Y.; Kim, E.K.; Min, S.-K. |
| 1998-07 | Selectively formed InAs quantum dot arrays for device application | Hahn, C.K.; Park, Y.J.; Park, K.H.; Hyun, C.K.; Kim, E.K.; Min, S.-K.; Park, J.H. |
| 1998-07 | Effects of Rapid Thermal Annealing on the Structural and Optical Properties of InAs/GaAs Self-Assembled Quantum Dots | Cho, S.; Hyon, C.K.; Kim, E.K.; Min, S.-K. |
| 1997-09 | C-V characteristics of Pt/SrBi2Ta2O9/CeO2/Si structure for non-volatile memory devices | Lee, H.N.; Shin, D.S.; Kim, Y.T.; Choh, S.H. |
