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C-V characteristics of Pt/SrBi2Ta2O9/CeO2/Si structure for non-volatile memory devices

Authors
Lee, H.N.; Shin, D.S.; Kim, Y.T.; Choh, S.H.
Issue Date
1997-09
Publisher
IEEE Computer Society
Citation
27th European Solid-State Device Research Conference, ESSDERC 1997, pp.756 - 759
Abstract
Electrical properties of Pt/SrBi2Ta2O9/CeO2/Si structure have been investigated for the ferroelectric gate of non-volatile memory. Memory windows of the ferroelectric gate are in the range of 1∼2V corresponding to the thickness of SrBi2Ta2O9 films at the applied voltage of 6V. This memory window is strongly dependent upon not the remanent polarization but the coercive field intensity applied to the SrBi2Ta2O9.
ISSN
1930-8876
URI
https://pubs.kist.re.kr/handle/201004/85495
DOI
10.1109/ESSDERC.1997.194539
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KIST Conference Paper > Others
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