| 1992-01 | Auger electron spectroscopy analysis of Au/Ti/TiNxGaAs structure. | KANG KWANG NHAM; Lee Jung Il; HAN SEUNG HEE; CHOI BYEONJ JIN; V. Bosy; Han Il Ki |
| - | Noise sources in polycrystalline silicon thin-film transistors. | Han Il Ki; Park Young Ju; Cho Woon Jo; Choi Won Jun; Lee Jung Il; Alain Chovet; Jean Brini |
| - | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO ₂ and SiNx capping films. | J.H. Lee; Choi Won Jun; Park Young Ju; Han Il Ki; Cho Woon Jo; Lee Jung Il; E.K. Kim |
| - | Analytic model for photo-response of p-channel MODFET's | KIM HWE JONG; Han Il Ki; Choi Won Jun; Park Young Ju; Cho Woon Jo; 김동명; Jacques Zimmermann; Lee, Jung Il |
| - | Enhancement of optical properties of InGaAs/GaAs self-assembled quantum dots by thermal annealing with a SiNx/SiO ₂ capping layer | J.H. Lee; Choi Won Jun; Park Young Ju; Han Il Ki; Lee Jung Il; Cho Woon Jo; E.K. Kim; C.M. Lee; H.-W. Kim |
| - | Spectral response modification of quantum well infrared photodetector by quantum well intermixing. | Shin Jae Cheol; Choi Won Jun; Han Il Ki; Park Young Ju; Lee Jung Il; KIM EUN KYU; H.J. Kim; 최정우 |
| - | Thermal treatment of InGaAs/GaAs self-assembled quantum dots with SiNx and SiO ₂ capping layers | J.H. Lee; Choi Won Jun; Park Young Ju; Han Il Ki; Lee Jung Il; Cho Woon Jo; E.K. Kim; C.M. Lee; H.-W. Kim |
| - | Correlation between threshold voltage shift and gate current change in MODFET's under optical illumination | KIM HWE JONG; 김동명; Han Il Ki; Choi Won Jun; Lee Jung Il |
| - | Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots | SONG JIN-DONG; Y. M. Park; J. G. Lim; Shin Jae Cheol; Park Young Ju; Choi Won Jun; Han Il Ki; Cho Woon Jo; Lee Jung Il |
| - | Study on the characteristics of InGaAsP/InGaAs MQW-LD with differently p-doped and asymmetric structures | Han Il Ki; Heo Duchang; Choi Won Jun; Lee Jung Il; 이주인 |
