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Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO ₂ and SiNx capping films.

Authors

J.H. Lee; Choi Won Jun; Park Young Ju; Han Il Ki; Cho Woon Jo; Lee Jung Il; E.K. Kim

Citation

2nd International Conference on Semiconductor Quantum Dots (QD2002), pp.159

URI

https://pubs.kist.re.kr/handle/201004/106663

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KIST Conference Paper > Others

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