| 2006-10 | UPnP Robot Middleware for Ubiquitous Robot Control | Ahn, Sang Chul; LIM KIWOONG; Lee, Jung Woo; Ko, Heedong; Kwon, Yong-Moo; KIM, Hyoung Gon |
| - | TOPOGRAPHICAL MODIFICATION OF POLYMERIC SURFACES BY CAPILLARITY DIRECTED SOFT-LITHOGRAPHIC TECHNIQUE FOR IMPROVED TRIBOLOGICAL PROPERTIES | R. Arving Singh; Yoon, Eui Sung; PHAM DUC CUONG; Kong, Hosung; Hoon Eui Jeong; Kahp Y. Suh |
| - | EFFECTS OF SILICON CONTENT ON FRICTION AND WEAR PROPERTIES OF SI-DLC/DLC MULTI-LAYER COATINGS | PHAM DUC CUONG; Yoon, Eui Sung; R. Arvind Singh; Kong, Hosung; Hyo-Sok Ahn |
| - | The Performance of Cu/Ni alloy based on perovskite catalyst anode in SOFC type reactor | Jang, Seong Hyuck; Hong, Suk In; Moon, Dong Ju; Kim, Joon Ho; Kim, Kwang Ho |
| - | ELECTRICAL CHARACTERISTICS OF LOW-TEMPERATURE CRYSTALLIZED SrBi2Nb2O9 THIN FILMS FOR FET TYPE FERAM | Kim, Yong Tae; KIM IK SOO; Youm Minsoo; Sung Man Young |
| - | EFFECTS OF SCALED CONTACT DIMENSION ON PHASE CHANGE RANDOM ACCESS MEMORY | Kim, Yong Tae; Park Yu Jin; Kwon Young Suk; Youm Minsoo; Sung Man Young |
| - | Analysis of dynamic response characteristics of PRAM cell | Kim, Yong Tae; Park Yu Jin; Lee Jeong Yong; Youm Min Soo |
| - | In situ transmission electron microscopy study on the nucleation and grain growth of Ge2Sb2Te5 thin films | Kim, Yong Tae; Park Yu Jin; Lee Jeong Yong; Kim, Seong Il; Kim, Young Hwan; Akihiro Wakahara |
| - | Scaling of Phase Changing Volume Dimension and Material Issues on Phase Change Random Access Memory | Kim, Yong Tae; Youm Min Soo; Kwon Young Suk; Sung Man Young |
| - | Stress evolution and diffusion barrier performance of La0.67Sr0.33MnO3 (LSMO)/WCN/Si structure | Chang Woo Lee; Kim, Yong Tae; Akihiro Wakahara; KIM Hee Joon |
| - | Ge-Te Chalcogenide Material for High-Speed Phase-Change Memory | Kim, Yong Tae; Kwon Young Suk; Eun Tae Kim; Choi In-Hoon |
| - | Material and Electrical Characteristics of SbxTe100-x for Phase Change Random Access Memory | Kim, Yong Tae; Youm Min Soo; Lee Dong Ho; Kang Gil Bum; Sung Man Young |
| - | Material and Electrical Characteristics of SbXTe100-X for Phase Change Random Access Memory | Kim, Yong Tae; Kwon Young Suk; Youm Min Soo; Sung Man Young |
| - | Crystallization behavior of Sb64Te36 binary alloy | Sun Chang Woo; Lee Jung Yong; Youm Min Soo; Kim, Yong Tae |
| - | Effects of Cell Structure and Contact Dimension on Phase Change Random Access Memory | Kim, Yong Tae; Youm Min Soo; Sung Man Young |
| - | Alternative Material Candidates and Scaling of Programming Dimension for Phase Change Random Access Memory | Kim, Yong Tae; Kim, Seong Il |
| - | Crystal extension of δ phase in SbxTe100-x phase change binary alloy along longitudinal axis without phase separation | Sun Chang Woo; Lee Joung Yong; Youm Min Soo; Kim, Yong Tae; Akihiro Wakahara |
| - | Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier | Kim, Yong Tae; Chang Woo Lee |
| - | Surface energy and equilibrium shape of hexagonal structured Ge2Sb2Te5 grain | Kim, Yong Tae; Park Yu Jin; Youm Min Soo; Akihiro Wakahara |
| - | Coarsening of MX Nitrides in Cr-Mo-N-X(X=V,Nb,Ti) Ferritic Steels | Bae Deuck-Seung; Jung, Woo Sang; Hong Suk Woo; Song Sang Min; Chung, Soon Hyo; Hong, Kyung Tae; Kyung Sub Lee |
