Low-temperature laser crystallization of Ge layers grown on MgO substrates
- Authors
- Baek, Jongyeon; Kim Seung-Hwan; Jeong, Heejae; Nguyen, Manh-Cuong; Daeyoon Baek; Baik, Seunghun; Hoang-Thuy Nguyen, An; Baek, Jong-Hwa; Kim, Hyung-jun; Kwon, Hyuk-Jun; Choi, Rino
- Issue Date
- 2023-01
- Publisher
- Elsevier BV
- Citation
- Applied Surface Science, v.609
- Abstract
- The crystallization of amorphous Ge layers grown at room temperature was investigated using continuous-wave green laser irradiation. The most favorable crystallization conditions for the 40-nm-thick Ge layer were determined by adjusting the laser power density, laser beam shape, and laser scan direction. The optimized laser irradiation crystallizes the amorphous Ge layer in a significantly long-range ordered structure on MgO (001) substrate, whereas that on SiO2/Si substrate becomes polycrystalline. The line-shaped flat-top beam profile of the laser along the MgO [100] scan direction is a decisive factor for uniform crystallization on the MgO substrate. A SiO2 capping layer suppresses heat dissipation from the surface of the amorphous Ge layer and facilitates a lower temperature at the Ge/MgO interface, resulting in the initiation of crystallization from the Ge/MgO interface after laser irradiation. Our analysis indicates that the Ge layer crystallized on MgO (001) substrate exhibits an in-plane epitaxial relationship of Ge [110] // MgO [100] with 45° misorientation.
- Keywords
- Laser crystallization; Epitaxial growth; Magnesium oxide; Germanium; Monolithic 3-dimensional structure
- ISSN
- 0169-4332
- URI
- https://pubs.kist.re.kr/handle/201004/75865
- DOI
- 10.1016/j.apsusc.2022.155368
- Appears in Collections:
- KIST Article > 2023
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.