Tuning current plateau regions in parallelized single-electron pumps

Abstract

The parallelization of single-electron pumps is a promising method to increase the quantized current level produced from a semiconductor-based single-electron system. In the parallelization of multiple pumps with common gate electrodes, the key process is to fabricate them with high reproducibility, resulting in an overlap of the most accurate regions in current plateaus at the same gate voltages. However, because of the lack of gating reproducibility, we here adopted a separate gate-tuning scheme to realize the overlap of the current plateaus instead of using a common gate scheme. To minimize the number of gates, we used entrance gates in common but an exit gate in separate with an additional in-common gate located outside the quantum dot but near the exit gates. The combination of the additional gate and separate exit gates led to an optimal current plateau overlap with a pair of pumps among six pumps in parallel. Under the optimal plateau-tuned condition, we achieved a relative type-A uncertainty of 1.4 × 10？6 at a 100 pA level with f = 160？MHz in the parallelized mode with the second current plateaus for both pumps.