DSpace at KISTKIST Conference Paper2023

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dc.contributor.authorKizilkan, E.-
dc.contributor.authorKaraca, U.-
dc.contributor.authorPesic, V.-
dc.contributor.authorLee, M. -J.-
dc.contributor.authorBruschini, C.-
dc.contributor.authorSpringThorpe, A. J.-
dc.contributor.authorWalker, A. W.-
dc.contributor.authorFlueraru, C.-
dc.contributor.authorPitts, O. J.-
dc.contributor.authorCharbon, E.-
dc.date.accessioned2024-01-12T02:45:13Z-
dc.date.available2024-01-12T02:45:13Z-
dc.date.created2023-11-30-
dc.date.issued2023-09-
dc.identifier.issn1930-8876-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/76388-
dc.description.abstractWe present a simulation method to estimate the dark count rate (DCR), photon detection probability (PDP), and dark current of InGaAs/InP single-photon avalanche diodes (SPADs) from 225K to 300K. All simulations are performed completely in TCAD and match well with the measurement results of our novel selective area growth (SAG) based InGaAs/InP SPAD. An optimized simulation environment has the potential of estimating the device performance without costly fabrication iterations. Hence, it will accelerate the development of high-performance InGaAs/InP SPADs.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleExtended Temperature Modeling of InGaAs/InP SPADs-
dc.typeConference-
dc.identifier.doi10.1109/ESSDERC59256.2023.10268545-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE 53rd European Solid-State Device Research Conference (ESSDERC), pp.140 - 143-
dc.citation.titleIEEE 53rd European Solid-State Device Research Conference (ESSDERC)-
dc.citation.startPage140-
dc.citation.endPage143-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceLisbon, PORTUGAL-
dc.citation.conferenceDate2023-09-11-
dc.relation.isPartOfIEEE 53RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, ESSDERC 2023-
dc.identifier.wosid001090588900035-
dc.identifier.scopusid2-s2.0-85175466559-
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