Demonstration of in-plane magnetized stochastic magnetic tunnel junction for binary stochastic neuron

Authors
Kim TaeyuebPark, HeeGyumHan, Ki-HyukNah, Young-Jun구현철민병철홍석민Lee, Ouk Jae
Issue Date
2022-07
Publisher
American Institute of Physics Inc.
Citation
AIP Advances, v.12, no.7, pp.1 - 6
Abstract
A binary stochastic neuron (BSN) or a probabilistic bit (p-bit) randomly fluctuates between digitized "0" and "1" with a controllable functionality of time-averaged value. Such an unconventional bit is the most essential building block for the recently proposed stochastic neural networks and probabilistic computing. Here, we experimentally implement a magnetic tunnel junction (MTJ) for BSN, with relaxation times on the order of tens of milliseconds that can be modulated by a current-induced spin-transfer torque. The NIST Statistical Test Suite (800-22a) is used to verify true random number generation by the BSN-MTJ device. Our results suggest the possibility of using the artificial BSN MTJ device in neuromorphic applications as well as in a recently proposed probabilistic computing. (c) 2022 Author(s).
ISSN
2158-3226
URI

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DOI
10.1063/5.0090577
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KIST Article > 2022
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