Demonstration of in-plane magnetized stochastic magnetic tunnel junction for binary stochastic neuron
- Authors
- Kim Taeyueb; Park, HeeGyum; Han, Ki-Hyuk; Nah, Young-Jun; 구현철; 민병철; 홍석민; Lee, Ouk Jae
- Issue Date
- 2022-07
- Publisher
- American Institute of Physics Inc.
- Citation
- AIP Advances, v.12, no.7, pp.1 - 6
- Abstract
- A binary stochastic neuron (BSN) or a probabilistic bit (p-bit) randomly fluctuates between digitized "0" and "1" with a controllable functionality of time-averaged value. Such an unconventional bit is the most essential building block for the recently proposed stochastic neural networks and probabilistic computing. Here, we experimentally implement a magnetic tunnel junction (MTJ) for BSN, with relaxation times on the order of tens of milliseconds that can be modulated by a current-induced spin-transfer torque. The NIST Statistical Test Suite (800-22a) is used to verify true random number generation by the BSN-MTJ device. Our results suggest the possibility of using the artificial BSN MTJ device in neuromorphic applications as well as in a recently proposed probabilistic computing. (c) 2022 Author(s).
- ISSN
- 2158-3226
- URI
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- DOI
- 10.1063/5.0090577
- Appears in Collections:
- KIST Article > 2022
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