Structural, Surface, and Electronic Structure Properties of Ag Ion-Implanted SrVO3 Thin Films

Abstract

SrVO3 films have been deposited on quartz substrates using radiofrequency (RF) sputtering technique. Ag- ions have been implanted with three fluences: 1 x 10(15) ions/cm(2), 3 x 10(15) ions/cm(2), and 5 x 10(15) ions/cm(2). The glancing-angle x-ray diffraction (GIXRD) results exhibited a decrease in the peak intensity; however, the results ruled out the possibility of other secondary phase formation upon increasing the Ag- ion fluence. Field emission scanning electron microscopy (FESEM) results revealed that Ag implantation has sputtered the surface layer and created rough/emptied films. Significant broadening/splitting of V L-2 near-edge x-ray absorption fine structure (NEXAFS) spectra convey the incorporation of Ag 4d states in the energy band structure of SrVO3 and electronic transitions from V 2p(1/2) states to the Ag-related states. O K-edge spectra have ruled out the charge transfer of O 1s orbits to the Ag states, even upon increasing the Ag concentration, and nullified the formation of AgO types of secondary phases.