Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Jeon, Nam Joong | - |
dc.contributor.author | Seo, Jangwon | - |
dc.contributor.author | Kim, Yanghee | - |
dc.contributor.author | Lee, Ji Yeong | - |
dc.contributor.author | Hong, Sugyeong | - |
dc.contributor.author | Kim, Sun Hee | - |
dc.contributor.author | Lee, Jung-Keun | - |
dc.date.accessioned | 2024-01-12T03:31:26Z | - |
dc.date.available | 2024-01-12T03:31:26Z | - |
dc.date.created | 2022-11-28 | - |
dc.date.issued | 2022-04 | - |
dc.identifier.issn | 2160-0392 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/76742 | - |
dc.description.abstract | FAMn:PbI3 perovskite films were synthesized and probed mainly through electron spin resonance (ESR) spectroscopy. FAMn:PbI3 with low (~1%) Mn concentration showed a hyperfine sextet line originated from Mn++ ions. FAMn:PbI3 with high (10%) Mn concentration showed broad resonance (~500 G peak-to-peak linewidth). However, after bombardment of FAMn:PbI3 with high Mn concentration by focused ion be ams (FIB), a sharp ESR peak appeared. The peak-to-peak linewidth (ΔHpp ) was ~8 G regardless of the temperature. The FIB-induced defect showed Curie behavior at low temperatures (5 K - 50 K), which indicates the presence of localized electrons at the defect sites at low temperatures. The g-value increased from g = 2. 0002 to 2.0016 as the temperature increased from 5 K to 50 K. Together with the ongoing search for electron spin echo (ESE), this could potentially provide a platform for realizing magnetic bits, information storage, and increased manipulation speed. | - |
dc.language | English | - |
dc.publisher | Scientific Research Pub | - |
dc.title | Focused-Ion-Beam Induced Paramagnetic Defects in FAMn:PbI3 Perovskite Films | - |
dc.type | Article | - |
dc.identifier.doi | 10.4236/aces.2022.122007 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | ADVANCES IN CHEMICAL ENGINEERING AND SCIENCE, v.12, no.02, pp.87 - 95 | - |
dc.citation.title | ADVANCES IN CHEMICAL ENGINEERING AND SCIENCE | - |
dc.citation.volume | 12 | - |
dc.citation.number | 02 | - |
dc.citation.startPage | 87 | - |
dc.citation.endPage | 95 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | other | - |
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