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dc.contributor.authorSim Geon-
dc.contributor.authorKim, Kitae-
dc.contributor.authorKwon NamHee-
dc.contributor.authorKang Hee Kyoung-
dc.contributor.author이연진-
dc.contributor.authorSoohyung Park-
dc.date.accessioned2024-01-12T03:43:30Z-
dc.date.available2024-01-12T03:43:30Z-
dc.date.created2021-12-14-
dc.date.issued2021-12-09-
dc.identifier.issn--
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/77271-
dc.languageEnglish-
dc.publisher한국물리학회 반도체분과 (국제학술)-
dc.titleControlling the Schottky-Mott barrier height of 2D semiconductor by using Van der Waals 2D semimetals-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationICAMD2021-
dc.citation.titleICAMD2021-
dc.citation.conferencePlaceKO-
dc.citation.conferencePlace제주-
dc.citation.conferenceDate2021-12-06-
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KIST Conference Paper > 2021
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