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dc.contributor.authorPark Chang Seon-
dc.contributor.authorCHANGWOO LEE-
dc.contributor.authorJUNG WON JUN-
dc.contributor.authorMin Park-
dc.contributor.authorDong Su Lee-
dc.contributor.authorHong Seok Lee-
dc.contributor.authorDae-Young Jeon-
dc.date.accessioned2024-01-12T03:45:35Z-
dc.date.available2024-01-12T03:45:35Z-
dc.date.created2021-09-29-
dc.date.issued2021-07-
dc.identifier.issn--
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/77376-
dc.languageEnglish-
dc.publisher한국전기전자재료학회-
dc.subjectMoS2-
dc.subjectField effect transistor-
dc.subjectOn/Off ratio-
dc.subjectChannel thickness-
dc.titleChannel Thickness-dependent Ambient Effects on the Operation of Multi Layer MoS2 Field-Effect Transistors-
dc.title.alternative다층 MoS2 전계 효과 트랜지스터의 작동에 대한 채널 두께 의존적 주변 효과-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation2021 한국전기전자재료학회 하계학술대회-
dc.citation.title2021 한국전기전자재료학회 하계학술대회-
dc.citation.conferencePlaceKO-
dc.citation.conferencePlace평창 알펜시아리조트-
dc.citation.conferenceDate2021-06-30-
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KIST Conference Paper > 2021
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