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dc.contributor.author김아영-
dc.contributor.author김홍희-
dc.contributor.author김기태-
dc.contributor.author한승연-
dc.contributor.author이연진-
dc.contributor.authorCHOI, WON-KOOK-
dc.contributor.authorSoohyung Park-
dc.date.accessioned2024-01-12T04:08:25Z-
dc.date.available2024-01-12T04:08:25Z-
dc.date.created2021-12-14-
dc.date.issued2021-02-04-
dc.identifier.issn--
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/77770-
dc.description.abstractZnO nanoparticles (NP) exhibit advantageous properties for quantum dot based electronic applications such as widely tunable band-gap and high enough conductivity to be used for an electron transport layer. According to the recent theoretical report, however, there exist unexpected defective states in ZnO that possibly affect the electrical and optical properties. In this work, we demonstrate the comprehensive understandings of the impact of defect states in ZnO-NP on their energy level alignments by using photoluminescence and photoelectron spectroscopy.-
dc.languageEnglish-
dc.publisher한국진공학회-
dc.titleThe impact of defect states in ZnO quantum dot on energy level alignment-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation2021년 제60회 한국진공학회 동계 정기학술대회-
dc.citation.title2021년 제60회 한국진공학회 동계 정기학술대회-
dc.citation.conferencePlaceKO-
dc.citation.conferencePlace온라인-
dc.citation.conferenceDate2021-02-04-
dc.relation.isPartOf한국진공학회 회보 제30권 1호-
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