DSpace at KIST: Thickness control of hexagonal boron nitride films for the utilization of gate-dielectric grown on silica substrate by chemical vapor deposition

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DC Field	Value	Language
dc.contributor.author	Park, Jae hyun	-
dc.date.accessioned	2024-01-12T06:12:55Z	-
dc.date.available	2024-01-12T06:12:55Z	-
dc.date.created	2022-01-14	-
dc.date.issued	2017-11-16	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/79470	-
dc.publisher	한국재료학회	-
dc.title	Thickness control of hexagonal boron nitride films for the utilization of gate-dielectric grown on silica substrate by chemical vapor deposition	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	2017년도 한국재료학회 추계학술대회	-
dc.citation.title	2017년도 한국재료학회 추계학술대회	-
dc.citation.conferencePlace	KO	-
dc.citation.conferencePlace	경주 현대호텔 컨벤션 C	-
dc.citation.conferenceDate	2017-11-15	-
dc.relation.isPartOf	2017년도 한국재료학회 추계학술대회	-

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