Thickness control of hexagonal boron nitride films for the utilization of gate-dielectric grown on silica substrate by chemical vapor deposition

Authors
Park, Jae hyun
Issue Date
2017-11-16
Publisher
한국재료학회
Citation
2017년도 한국재료학회 추계학술대회
URI
https://pubs.kist.re.kr/handle/201004/79470
Appears in Collections:
KIST Conference Paper > 2017
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