Preparation of Silicon Thin Film by Plasma Enhanced Chemical vapor Deposition as a High Capacity Anode for Lithium Polymer Batteries

Abstract

The properties of semi-conductive silicon thin films (n-type and p-type silicon) deposited by radio frequency coupled plasma enhanced chemical vapor deposition (rfpecvd) on copper foil were studied using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. The charge/discharge tests revealed that the n-type silicon thin film electrode shows a stable cyclic performance after the 40th cycle and it maintains a reversible specific capacity of about 2500 mAh/g. The excellent electrochemical performance of the doped silicon anode was attributed to the enhancement of its electrical conductivity, which was further confirmed by impedance spectroscopy and surface analysis by XPS.