DSpace at KISTKIST Conference Paper2006

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dc.contributor.authorJae, H.C.-
dc.contributor.authorWoo, Deok Ha-
dc.contributor.authorJung, Mi-
dc.contributor.authorKeunjoo, K.-
dc.date.accessioned2024-01-12T07:55:26Z-
dc.date.available2024-01-12T07:55:26Z-
dc.date.created2022-03-01-
dc.date.issued2006-10-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/81546-
dc.description.abstractTwo-dimensional photonic crystals were fabricated by a two-step anodization of the deposited Al layer on p-GaN surface of InGaN/GaN multi-quantum-well light-emitting-diode structures. Alumina hole arrays with nanometer-scale dimensions enhance the photoluminescence intensity up to three times. The GaN photonic crystals formed by dry etching process also provide the enhancement of light extraction.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleThe nanophotonic crystals of anodic alumina deposited on InGaN/GaN quantum well structures-
dc.typeConference-
dc.identifier.doi10.1109/NMDC.2006.4388751-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, pp.328 - 329-
dc.citation.title2006 IEEE Nanotechnology Materials and Devices Conference, NMDC-
dc.citation.startPage328-
dc.citation.endPage329-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceGyeongju-
dc.citation.conferenceDate2006-10-22-
dc.relation.isPartOf2006 IEEE Nanotechnology Materials and Devices Conference, NMDC-
dc.identifier.scopusid2-s2.0-50249086876-
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KIST Conference Paper > 2006
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