COIN-NGNCON 2006 - The Joint International Conference on Optical Internet and Next Generation Network, pp.244 - 246
Abstract
Ion implantation-induced quantum well intermixing (QWI) of InGaAs/InGaAsP quantum well structure has shown to be an efficient way to fabricate photonic integrated circuits. We investigate the characteristics of a newly developed QWI with two-step thermal treatments. ?2006 OSIA.