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dc.contributor.author송종한-
dc.contributor.author이석-
dc.contributor.author최원국-
dc.contributor.author윤영수-
dc.contributor.author임성일-
dc.date.accessioned2024-01-12T08:08:14Z-
dc.date.available2024-01-12T08:08:14Z-
dc.date.issued2003-02-27-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/81768-
dc.title이온주입에 의한 고전압 쇼트키 다이오드 제조방법-
dc.typePatent-
dc.date.registration2003-02-27-
dc.date.application2000-08-09-
dc.identifier.patentRegistrationNumber375595-
dc.identifier.patentApplicationNumber00-46213-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2000
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