Characterization of SiC nanowires grown by APCVD using single precursors

Authors
Rho, D.-H.Kim, J.-S.Byun, D.-J.Yang, J.-W.Lee, J.-H.Kim, N.-R.
Issue Date
2005-11
Publisher
Materials Research Society
Citation
2004 MRS Fall Meeting, pp.317 - 322
Abstract
SiC nanowire was grown by APCVD using single precursors. Grown SiC nanowires had 10-60nm diameters and lengths of several micrometers. Nanowire's diameters and lengths were varied with kind of catalysts. Nanowire's growth scheme was divided by two regions with diameter of nanowire. At first region, nanowire was grown by VLS (vapor-liquid-solid) mechanism, but at the second region, nanowire growth was made by VS (vapor-solid) reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanowire's diametesr and its lengths. And kind of catalysts, coating methods and precursors were affected growth direction and microstructures too. ? 2005 Materials Research Society.
ISSN
0272-9172
URI
https://pubs.kist.re.kr/handle/201004/81957
Appears in Collections:
KIST Conference Paper > 2005
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE