DSpace at KISTKIST Conference Paper2005

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dc.contributor.authorChin, B.D.-
dc.contributor.authorLee, S.-H.-
dc.contributor.authorKim, J.K.-
dc.contributor.authorLee, S.T.-
dc.date.accessioned2024-01-12T08:15:42Z-
dc.date.available2024-01-12T08:15:42Z-
dc.date.created2022-03-07-
dc.date.issued2005-10-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/81971-
dc.description.abstractWe have controlled doping profile and layered structure of electrophosphorescent device system for enhanced efficiency and lifetime. Power efficiency was improved dramatically only by the doping profile change at emission layer. Proposed mechanism was further confirmed by use of different hole blockers. We explained underlying physical mechanism of device by the charge trapping and energy level alignment.-
dc.languageEnglish-
dc.titleHighly efficient electrophosphorescent device with controlled doping profile-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSecond Americas Display Engineering and Applications Conference, ADEAC 2005, pp.195 - 198-
dc.citation.titleSecond Americas Display Engineering and Applications Conference, ADEAC 2005-
dc.citation.startPage195-
dc.citation.endPage198-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlacePortland, OR-
dc.citation.conferenceDate2005-10-25-
dc.relation.isPartOfProceedings of the Second Americas Display Engineering and Applications Conference, ADEAC 2005-
dc.identifier.scopusid2-s2.0-33644773666-
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