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dc.contributor.authorNam, H.-
dc.contributor.authorSong, J.-
dc.contributor.authorChoi, W.-
dc.contributor.authorLee, J.-
dc.contributor.authorYang, H.-
dc.contributor.authorZhang, B.-
dc.contributor.authorLu, W.-
dc.date.accessioned2024-01-12T08:15:46Z-
dc.date.available2024-01-12T08:15:46Z-
dc.date.created2022-03-07-
dc.date.issued2005-10-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/81974-
dc.description.abstractIn this paper, we report 21 μm photoresponse with InAs/InGaAs/GaAs quantum-dot-in-a-well photodetector structure. The self-assembled InAs quantum dots were grown on InGaAs/GaAs well structure via atomic layer molecular beam epitaxy and fabricated as intersubbamd photoconductlve structure. The far-infrared/THz 21 μm photoresponse was measured at 4.2K. Photoresponses were observed over the range of λ = 3 μm to 25μm with peaks at 21, 15, 8 μm, respectively.-
dc.languageEnglish-
dc.publisherMWP-
dc.titleFar-infrared/THz photodetector with self-assembled Quantum dots-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationInternational Topical Meeting on Microwave Photonics, MWP 2005, pp.289 - 292-
dc.citation.titleInternational Topical Meeting on Microwave Photonics, MWP 2005-
dc.citation.startPage289-
dc.citation.endPage292-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceSeoul-
dc.citation.conferenceDate2005-10-12-
dc.relation.isPartOfInternational Topical Meeting on Microwave Photonics, MWP 2005-
dc.identifier.scopusid2-s2.0-33847161233-
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KIST Conference Paper > 2005
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