Full metadata record

DC Field Value Language
dc.contributor.author김동준-
dc.contributor.author김용태-
dc.date.accessioned2024-01-12T08:36:38Z-
dc.date.available2024-01-12T08:36:38Z-
dc.date.issued2000-01-08-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/82254-
dc.titleTaSiNx확산 방지막의 제조방법과 그를 이용한 반도체 소자의 접촉접합및 다층금속 배선-
dc.typePatent-
dc.date.registration2000-01-08-
dc.date.application1997-11-04-
dc.identifier.patentRegistrationNumber250954-
dc.identifier.patentApplicationNumber97-57884-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
Appears in Collections:
KIST Patent > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE