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dc.contributor.author이동준-
dc.contributor.author박재현-
dc.date.accessioned2024-01-12T08:39:31Z-
dc.date.available2024-01-12T08:39:31Z-
dc.date.issued2022-01-14-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/82388-
dc.titleHigh-k 절연층 위에 보론 나이트라이드 단일 원자층 직접 전사법을 활용한 차세대 게이트 다이일렉트릭 구현-
dc.typePatent-
dc.date.registration2022-01-14-
dc.date.application2020-11-18-
dc.identifier.patentRegistrationNumber10-2353225-
dc.identifier.patentApplicationNumber10-2020-0154191-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2020
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