DSpace at KISTKIST Patent2019

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dc.contributor.author김수민-
dc.contributor.author이주송-
dc.contributor.author손장엽-
dc.contributor.author구혜영-
dc.contributor.author이승기-
dc.contributor.author고하영-
dc.date.accessioned2024-01-12T09:04:55Z-
dc.date.available2024-01-12T09:04:55Z-
dc.date.issued2022-05-24-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/82808-
dc.title단결정 이종 2차원 물질의 애피택셜 성장 방법 및 적층 구조체-
dc.typePatent-
dc.date.registration2022-05-24-
dc.date.application2019-09-30-
dc.identifier.patentRegistrationNumber11339499-
dc.identifier.patentApplicationNumber16/587066-
dc.publisher.countryUS-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2019
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