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dc.contributor.authorKim, Yong Tae-
dc.date.accessioned2024-01-12T10:11:00Z-
dc.date.available2024-01-12T10:11:00Z-
dc.date.created2022-01-14-
dc.date.issued2000-07-24-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/84352-
dc.titleEffects of Y to Mn ratio on memory window in the YMnO3 ferroelectric gate-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation, pp.66 - 69-
dc.citation.startPage66-
dc.citation.endPage69-
dc.relation.isPartOfICEE2K Proc-
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KIST Conference Paper > 2000
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