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높은 위상변조 효율을 갖는 ＩｎＧａＡｓＰ／ＩｎＰｒｉｄｇｅ 도파로 위상 변조기의 에피박막층 제조방법

Author

변영태; 이석; 박화선; 우덕하; 이종창

Assignee

한국과학기술연구원

Regitration Date

2006-05-02

Registration No.

7,037,739

Application Date

2004-01-06

Application No.

10/751,858

Country

US

URI

https://pubs.kist.re.kr/handle/201004/84569

Appears in Collections:

KIST Patent > 2004

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