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dc.contributor.authorLee, H.N.-
dc.contributor.authorShin, D.S.-
dc.contributor.authorKim, Y.T.-
dc.contributor.authorChoh, S.H.-
dc.date.accessioned2024-01-12T10:40:17Z-
dc.date.available2024-01-12T10:40:17Z-
dc.date.created2022-03-10-
dc.date.issued1999-11-
dc.identifier.issn0272-9172-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/84871-
dc.description.abstractWe have fabricated metal/ferroelectric/insulator/semiconductor (MEFIS) capacitors of Pt/SrBi2Ta2O9(SBT)/CeO2/Si and Pt/SBT/Ce-Si-O/Si. The cerium silicate (Ce-Si-O) layer is formed by reaction between CeO2 thin film and SiO2/Si substrate at 1100°C. The SBT film on the cerium silicate layer is smoother than the SBT/CeO2. The memory window of the SBT/Ce-Si-O increases to 1.4 V at a sweep voltage of ±5 V, whereas the memory window of the SBT/CeO2 is 0.8 V at the same sweep voltage.-
dc.languageEnglish-
dc.publisherMaterials Research Society, Warrendale, PA, United States-
dc.titleEffect of cerium silicate formation on the structural and electrical properties of Pt/SrBi2Ta2O9/CeO2/Si capacitors-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998', pp.543 - 548-
dc.citation.title1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'-
dc.citation.startPage543-
dc.citation.endPage548-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceBoston, MA, USA-
dc.citation.conferenceDate1998-11-30-
dc.relation.isPartOfMaterials Research Society Symposium - Proceedings-
dc.identifier.scopusid2-s2.0-0032592291-
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