Effect of cerium silicate formation on the structural and electrical properties of Pt/SrBi2Ta2O9/CeO2/Si capacitors

Authors
Lee, H.N.Shin, D.S.Kim, Y.T.Choh, S.H.
Issue Date
1999-11
Publisher
Materials Research Society, Warrendale, PA, United States
Citation
1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998', pp.543 - 548
Abstract
We have fabricated metal/ferroelectric/insulator/semiconductor (MEFIS) capacitors of Pt/SrBi2Ta2O9(SBT)/CeO2/Si and Pt/SBT/Ce-Si-O/Si. The cerium silicate (Ce-Si-O) layer is formed by reaction between CeO2 thin film and SiO2/Si substrate at 1100°C. The SBT film on the cerium silicate layer is smoother than the SBT/CeO2. The memory window of the SBT/Ce-Si-O increases to 1.4 V at a sweep voltage of ±5 V, whereas the memory window of the SBT/CeO2 is 0.8 V at the same sweep voltage.
ISSN
0272-9172
URI
https://pubs.kist.re.kr/handle/201004/84871
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KIST Conference Paper > Others
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