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dc.contributor.authorKim, Yong Tae-
dc.date.accessioned2024-01-12T11:09:27Z-
dc.date.available2024-01-12T11:09:27Z-
dc.date.created2022-01-14-
dc.date.issued1998-07-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/85401-
dc.titleEnhancement of memory window in the metal/ferroelectric/insulator/semiconductor field effect transitor-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationECAPD IV '98/ISAF XI '98/Electroceramic VI '98, pp.0-
dc.citation.titleECAPD IV '98/ISAF XI '98/Electroceramic VI '98-
dc.citation.startPage0-
dc.citation.endPage0-
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