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dc.contributor.authorLee, H.N.-
dc.contributor.authorShin, D.S.-
dc.contributor.authorKim, Y.T.-
dc.contributor.authorChoh, S.H.-
dc.date.accessioned2024-01-12T11:11:33Z-
dc.date.available2024-01-12T11:11:33Z-
dc.date.created2022-03-07-
dc.date.issued1997-09-
dc.identifier.issn1930-8876-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/85495-
dc.description.abstractElectrical properties of Pt/SrBi2Ta2O9/CeO2/Si structure have been investigated for the ferroelectric gate of non-volatile memory. Memory windows of the ferroelectric gate are in the range of 1∼2V corresponding to the thickness of SrBi2Ta2O9 films at the applied voltage of 6V. This memory window is strongly dependent upon not the remanent polarization but the coercive field intensity applied to the SrBi2Ta2O9.-
dc.languageEnglish-
dc.publisherIEEE Computer Society-
dc.titleC-V characteristics of Pt/SrBi2Ta2O9/CeO2/Si structure for non-volatile memory devices-
dc.typeConference-
dc.identifier.doi10.1109/ESSDERC.1997.194539-
dc.description.journalClass1-
dc.identifier.bibliographicCitation27th European Solid-State Device Research Conference, ESSDERC 1997, pp.756 - 759-
dc.citation.title27th European Solid-State Device Research Conference, ESSDERC 1997-
dc.citation.startPage756-
dc.citation.endPage759-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceStuttgart-
dc.citation.conferenceDate1997-09-22-
dc.relation.isPartOfEuropean Solid-State Device Research Conference-
dc.identifier.scopusid2-s2.0-84907529685-
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