Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel

Abstract

We have studied on the enhancement of field emission characteristics by hydrogen-free N-doped diamond-like carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The Spindt-type Molybdenum tip is used as a emission source without resistive layer on silicon substrate. The maximum emission current for each pixel was increased from 160 μA to 1520 μA by 20 nm N-doped DLC coating Furthermore, the emission current from DLC coated FEAs is more stable than that of non-coated FEAs.