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Fabrication of metal-ferroelectric-insulator-semiconductor field dffect transistor (MEFISFET) using Pt-SrBi2Ta2O9-Y2O3-Si structure

Authors

Kim, Yong Tae

Issue Date

1997-07-01

Citation

Solid state Devices and Materials '97, pp.0

URI

https://pubs.kist.re.kr/handle/201004/85513

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KIST Conference Paper > Others

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