Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer

Abstract

Semiconductor quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers instead of proton implantation is reported. A schematic diagram of the proposed laser structure is presented. A n-GaAs buffer and a 2-μm-thick p-GaAs layer for current blocking were grown on (100) GaAs substrates. The structure and optical properties of the QWR were investigated using transmission electron microscopy and low temperature photoluminescence (PL). An output power of 11.8 mW from some quantum wire laser array (QWLA) was observed, as well as threshold currents as low as 228 mA. The differential quantum efficiency for the devices with high power output exceeded 20% and the lasing wavelength was 826 nm.