Anodic bonding technique under low-temperature and low-voltage using evaporated glass

Abstract

We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at 135 °C with an applied voltage of 35 VDC, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than 1 μm thick was suitable for anodic bonding. We have also investigated the possibility of evaporated glass layer as an insulating layer as well as a bonding layer.